RF SECTION - Receiver
Attenuators
| Product Name | Status | Description | Features | Package | Q-Level |
| CZA04S & CZA06S | Surface Mount Chip Resistor Attenuator | R = 50 ohms to 500 ohms; P = 40 mW to 75 mW; |
SMD 0402; 0603 |
Inductors
| Product Name | Status | Description | Features | Package | Q-Level |
| IFCB-0402 | Thin film ceramic chip inductor | L = 1 nH to 22 nH; I = 90 mA to 700 mA; |
'0402 | ||
| ILC-0402 | High-frequency ceramic chip inductor; Multilayer; |
L = 1 nH to 100 nH; I = 100 mA to 300 mA; |
SMD 0402 |
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| IMC-0402 | High Q/SRF laser spiral coated inductor | L = 1 nH to 100 nH; I = 90 mA to 400 mA; Q = 14 to 21; |
'0402 |
RF Capacitors
| Product Name | Status | Description | Features | Package | Q-Level |
| HPC0201A | NEW | SMD silicon capacitor up to 15 GHz; High-performance; high-precision; |
VR = 25 V; C = 0.4 pF to 39 pF; |
0201 | |
| HPC0402A | NEW | SMD silicon capacitor up to 15 GHz; High-performance; high-precision; |
VR = 50 V; C = 0.1 pF to 180 pF; |
0402 | |
| HPC0402B/C | NEW | SMD silicon capacitor up to 15 GHz; High-performance; high-precision; |
VR = 25 V; C = 0.1 pF to 180 pF; very low profile; |
0402 | |
| HPC0603A | NEW | SMD silicon capacitor up to 15 GHz; High-performance; high-precision; |
VR = 50 V; C = 0.8 pF to 560 pF; |
0603 | |
| VJ C0G (NP0) Dielectric MLCC |
Monolithic ceramic chip capacitor | VR = 25 V to 100 V; C = 1 pF to 100 pF; |
SMD 0402 |
RF Transistors
| Product Name | Status | Description | Features | Package | Q-Level |
| BFP182TW | Silicon NPN Planar RF Transistor; Low Noise; Low Power; up to 7.5 GHz; |
P = 200 mW, IC = 35 mA | SMD SOT-343; SOT-343R; |
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| BFP193TW | Silicon NPN Planar RF Transistor; Low Noise; up to 8.0 GHz; |
P = 420 mW, IC = 80 mA | SMD SOT-343; SOT-343R; |
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| BFP196TW | Silicon NPN Planar RF Transistor; Low Noise; High Power; up to 7.5 GHz; |
P = 500 mW, IC = 100 mA | SMD SOT-343; |
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| TSDF1205W | Low-noise NPN RF transistors for 12 GHz to 25 GHz; |
P = 40 mW, IC = 12 mA | SMD SOT-343 SOT-343R |
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| TSDF1220W | Low-noise NPN RF transistors for 12 GHz to 25 GHz; |
P = 200 mW, IC = 40 mA | SMD SOT-343 SOT-343R |
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| TSDF1250W | Low-noise NPN RF transistors for 12 GHz to 25 GHz; |
P = 200 mW, IC = 60 mA | SMD SOT-343 SOT-343R |
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| TSDF1920W | 25-GHz NPN RF transistors very high power gain; Very low-noise; |
P = 40 mW, IC = 12 mA | SOT343R | ||
| TSDF2020W | 25-GHz NPN RF transistors very high power gain; Very low-noise; |
P = 200 mW, IC = 40 mA | SOT343R |
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