POWER MANAGEMENT - System-,DDR-,Chipset-,VGA-Power
Dual MOSFETs
| Product Name | Status | Description | Features | Package | Q-Level |
| Si4830 ADY | Dual N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY DUAL; With 2 A SCHOTTKY; VDS = 30V; VGS = ± 20V |
VGS = ± 20V ID=7.5A; rDS(on)=0.030Ω Qgd= 2.5nC; VGSth= 1.4 V; |
SMD SO-8 |
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| Si4834BDY | Dual N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY DUAL; With 2 A SCHOTTKY; VDS = 30V; VGS = ± 20V |
VGS = ± 20V ID=7.5A; rDS(on)=0.030Ω Qgd= 2.5nC; VGSth= 0.8 V; |
SMD SO-8 |
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| Si4914DY | Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY DUAL; With 2 A SCHOTTKY; |
ID = 7 A / 7.4 A rDS(on)=0.032Ω / 0.027Ω Qgd=1.7 / 2.2nC; VGSth=1V |
SMD SO-8 |
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| Si4952DY | Dual N-Channel 25-V (D-S) MOSFET DUAL VDS = 25V; VGS = ± 16V |
VGS = ± 20V ID=7.5A; rDS(on)=0.030Ω Qgd= 2.5nC; VGSth= 0.8 V; |
SMD SO-8 |
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| Si7844DP | Dual N-Channel 30-V (D-S) MOSFET; VGS= ± 20V; TrenchFET® Power MOSFET |
High power dissipation; ID=10 A; rDS(on)= 0.030 Ω Qgd= 2.7nC; VGSth= 0.8 V; |
SMD PowerPAK SO-8 |
High-Side MOSFETs
| Product Name | Status | Description | Features | Package | Q-Level |
| Si4386DY | N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V |
Low Qgd, low rDS(on) ID=16A; rDS(on)=0.0095Ω Qgd = 3.0 nC; |
SMD SO-8 |
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| Si4392DY | N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V |
Low Qgd ID=12.5A;rDS(on)=0.01375Ω Qgd = 2.6 nC; |
SMD SO-8 |
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| Si4682DY | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V |
Low Qgd ID=12A; rDS(on)=0.0135Ω Qgd = 3.1 nC; |
SMD SO-8 |
|
| Si4684DY | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 12V |
Low Qgd ID=12A; rDS(on)=0.0135Ω Qgd = 2.8 nC; |
SMD SO-8 |
|
| Si4686DY | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Extremely Low Qgd WFET® Technology |
Low Qgd ID=13.8A; rDS(on)=0.014Ω Qgd = 2.8 nC; |
SMD SO-8 |
|
| Si4800BDY | N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 25V High-Efficient PWM Optimized |
High VGS = ± 25V ID=9A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; |
SMD SO-8 |
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| Si4812BDY | N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY With 1.4 A SCHOTTKY; VDS = 30V; VGS = ± 20V |
VGS = ± 20V ID=9.5A; rDS(on)=0.021Ω Qgd= 2.6nC; VGSth= 1 V; |
SMD SO-8 |
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| Si4894BDY | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V |
Low Qgd ID=12A; rDS(on)=0.016Ω VGSth = 1 V |
SMD SO-8 |
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| Si7112DN | NEW | N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 12V Small package; |
low Qgd, low rDS(on) ID=17.8A; rDS(on)=0.0082Ω Qgd= 3.1nC; VGSth= 0.6 V; |
SMD PowerPAK 1212 |
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| Si7230DN | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V PWM Optimized |
Small package ID=14A; rDS(on)=0.016Ω Qgd= 4.3nC; VGSth= 1 V; |
SMD PowerPAK 1212 |
|
| Si7326DN | N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 20V |
Small package ID=10A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; |
SMD PowerPAK 1212 |
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| Si7386DP | NEW | N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V |
Low Qgd, low rDS(on) ID=19A; rDS(on)=0.0095Ω Qgd = 3.0 nC |
SMD PowerPAK SO-8 |
|
| Si7392DP | N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V |
Low Qgd ID=15A; rDS(on)=0.01375Ω Qgd = 2.6 nC |
SMD PowerPAK SO-8 |
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| Si7682DP | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V 100% Rg Tested |
Low Qgd ID=17.5A; rDS(on)=0.013Ω Qgd = 3.1 nC; |
SMD PowerPAK SO-8 |
|
| Si7686DP | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low Thermal Resistance PowerPAK® |
Low Qgd ID=17.9A; rDS(on)= 0.014Ω Qgd = 2.8 nC; |
SMD PowerPAK SO-8 |
Inductors
| Product Name | Status | Description | Features | Package | Q-Level |
| IHLP1616BZ-01 | NEW | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Ultra Miniature Power |
Profile height ≤ 2 mm; 0.47 μH to 4.7 μH; IDC up to 12.8 A; |
SMD 1616 4.8x4.8x2.0mm |
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| IHLP2525CZ-01 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Miniature Power |
Profile height ≤ 3 mm 0.1 μH to 10 μH IDC up to 60 A |
SMD 2525 7.3x7.3x3.0mm |
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| IHLP4040DZ-01 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; |
Profile height ≤ 4mm 0.19 μH to 10 μH IDC up to 90 A |
SMD 4040 11.5x11.5x4.0mm |
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| IHLP4040DZ-11 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; |
Profile height ≤ 4mm 0.19 μH to 100 μH IDC up to 46 A |
SMD 4040 11.5x11.5x4.0mm |
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| IHLP5050CE-01 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; |
Profile height ≤ 3.5mm 0.1 μH to 10 μH IDC up to 84 A |
SMD 5050 13.5x13.5x3.5mm |
Low-Side MOSFETs
| Product Name | Status | Description | Features | Package | Q-Level |
| Si4336DY | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V |
Low rDS(on) ID=16.3A; rDS(on)=0.0067Ω VGSth = 1.0 V; |
SMD SO-8 |
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| Si4386DY | N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V |
Low Qgd, low rDS(on) ID=16A; rDS(on)=0.0095Ω Qgd = 3.0 nC; |
SMD SO-8 |
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| Si4430BDY | N-Channel 30-V MOSFET VDS = 30V; VGS = ± 20V |
Low rDS(on) ID=20A; rDS(on)=0.006Ω VGSth = 1.0 V; |
SMD SO-8 |
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| Si4634DY | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V |
Low rDS(on), high Vast ID=16.3A; rDS(on)=0.0067Ω VGSth = 1.4 V; |
SMD SO-8 |
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| Si4682DY | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V |
VGS = ± 20V ID=12A; rDS(on)=0.0135Ω Qgd = 3.1 nC; |
SMD SO-8 |
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| Si4686DY | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Extremely Low Qgd WFET® Technology |
VGS = ± 20V ID=13.8A; rDS(on)=0.014Ω Qgd = 2.8 nC; |
SMD SO-8 |
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| Si4800BDY | N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 25V High-Efficient PWM Optimized |
High VGS = ± 25V ID=9A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; |
SMD SO-8 |
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| Si4812BDY | N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY With 1.4 A SCHOTTKY; VDS = 30V; VGS = ± 20V |
VGS = ± 20V ID=9.5A; rDS(on)=0.021Ω Qgd= 2.6nC; VGSth= 1 V; |
SMD SO-8 |
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| Si4874BDY | NEW | N-Channel 30-V MOSFET VDS = 30V; VGS = ± 20V |
Low rDS(on) ID=16A; rDS(on)=0.0085Ω VGSth = 1 V |
SMD SO-8 |
|
| Si7112DN | NEW | N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 12V Small package; |
low Qgd, low rDS(on) ID=17.8A; rDS(on)=0.0082Ω Qgd= 3.1nC; VGSth= 0.6 V; |
SMD PowerPAK 1212 |
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| Si7114DN | NEW | N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 20V TrenchFET® Gen II Power MOSFET |
Small package ID=18.3A; rDS(on)=0.010Ω Qgd= 3.6nC; VGSth= 1 V; |
SMD PowerPAK 1212 |
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| Si7230DN | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V PWM Optimized |
Small package ID=14A; rDS(on)=0.016Ω Qgd= 4.3nC; VGSth= 1 V; |
SMD PowerPAK 1212 |
|
| Si7326DN | NEW | N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 20V |
Small package ID=10A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; |
SMD PowerPAK 1212 |
|
| Si7336 ADP | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Ultra Low (ON) Resistance; |
Low rDS(on) ID=30A; rDS(on)=0.0040Ω VGSth = 1 V |
SMD PowerPAK SO-8 |
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| Si7634BDP | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V |
Low rDS(on), high Vast ID=23A; rDS(on)=0.0076Ω VGSth = 1.5 V |
SMD PowerPAK SO-8 |
|
| Si7636DP | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Ultra Low (ON) Resistance |
Low rDS(on) ID=28A; rDS(on)=0.0048Ω VGSth = 1 V |
SMD PowerPAK SO-8 |
Resistors
| Product Name | Status | Description | Features | Package | Q-Level |
| WSL2010-18 | 1 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; |
High power & reliability R=0.001Ω to 0.2Ω TCR ≤ 20ppm |
SMD 2010 5.08x2.54x0.635 |
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| WSL2512-18 | 2 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; |
High power & reliability R=0.001Ω to 0.2Ω TCR ≤ 20ppm |
SMD 2512 6.36x3.18x0.635 |
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| WSLP1206 | NEW | 1 Watt Power Metal Strip® Resistors; Very High Power- Small Size; Current Sensing; |
High power & reliability R=0.001Ω to 0.2Ω |
SMD 1206 3.2x1.6x0.635mm |
Schottky Diodes
| Product Name | Status | Description | Features | Package | Q-Level |
| B140 | Schottky Barrier Rectifier; Low Profile; Guardring for overload protection; High Surge Capabilities; |
VRRM = 40 V; IF = 1 A, VF = 0.52 V, |
SMD DO-214AC (SMA) 5.28x2.8x2.3mm |
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| B240 A | High-Current Density Schottky Rectifier High Efficiency; Low Power Loss; Low Profile |
VRRM = 40 V; IF = 2 A, VF = 0.5 V, |
SMD DO-214AC (SMA) 5.28x2.8x2.3mm |
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| B340 A | High-Current Density Schottky Rectifier High Efficiency; Low Power Loss; RoHS-Compliant |
VRRM = 40 V; IF = 3A, VF = 0.5 V, |
SMD DO-214AC (SMA) 5.28x2.8x2.3mm |
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| MSS1P4 | Schottky Barrier Rectifiers SMD; ℮SMP™ Series; |
VRRM = 40 V; IF = 1 A; VF = 0.41 V; |
SMD MicroSMP 2.7x1.4x0.75mm |
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| SS1P4 | NEW | Schottky Barrier Rectifiers; SMD; High Current Density; ℮SMP™ Series; |
Small package VRRM = 40 V; IF = 2 A, VF = 0.4 V, |
SMD DO-220AA (SMP) 4x2.18x1.15mm |
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| SS2P4 | NEW | Schottky Barrier Rectifiers; SMD; High Current Density; ℮SMP™ Series; |
Small package VRRM = 40 V; IF = 2 A, VF = 0.43 V, |
SMD DO-220AA (SMP) 4x2.18x1.15mm |
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| SS3P4 | NEW | Schottky Barrier Rectifiers; SMD; High Current Density;℮SMP™ Series; |
Small package VRRM = 40 V; IF = 3A, VF = 0.5 V, |
SMD DO-220AA (SMP) 4x2.18x1.15mm |
Small-Signal MOSFET
| Product Name | Status | Description | Features | Package | Q-Level |
| 2N7002K | N-Ch 60-V (D-S)MOSFET; 2KV ESD protected Low On-Resistance; Low Threshold; Low Input Capacitance; Fast Switch |
VDS = 60 V; VGS = 20 V; rDS(on) = 4 Ohms, ID = 0.3A, VGSth = 1 V |
SMD TO-236 (SOT-23) |
Switch Diodes
| Product Name | Status | Description | Features | Package | Q-Level |
| 1N4148WS-V | Small Signal Fast Switching Diode; Silicon epitaxial planar diode; RoHS-Compliant; |
VRRM = 75 V; IF = 0.15A; VF = 1.2 V; |
SMD SOD323 2.85x1.5x1.15mm |
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| BAT54 A | Schottky Barrier Diode; DUAL; Miniature; for high speed switching; clamping; and circuit protection. |
Dual, VRRM = 30 V; IF = 0.2 A, VF = 0.5 V, |
SMD TO-236 (SOT-23) 3.1x2.6x1.15mm |
Std. | |
| BAT54 A-V | Small Signal Schottky Diodes; Single & Dual Schematics; Very Low Turn-On and Fast Switching |
Dual, VRRM = 30 V; IF = 0.2 A, VF = 0.8 V, |
SMD TO-236 (SOT-23) 3.0x2.5x1.1mm |
Thin Pack | |
| BAT54 AW | Schottky Barrier Diode; DUAL; Miniature; | DUAL;VRRM = 30 V, IF = 0.2 A, VF = 0.5 V, |
SMD SOT-323 2.2x2.2x1.0mm |
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| MBR0530 | Schottky Diodes; Fast Switching; Ultra Low Forward Voltage drop; |
VRRM = 30 V; IF = 0.5 A, VF = 0.35 V; |
SMD SOD123 3.85x1.7x1.35mm |
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